t o-92 plastic-encap sulate t ransistors 2n3904g transi st or (npn) fea t ure npn silicon epit a xial planar transistor for switching and a mplifier applications as complement ary type, the pnp transistor 2n390 6 is r ecommend ed this transistor is also ava ilable in the sot - 23 case with the type designation mmbt3904 maximum ra tings (t a =25 unless other w is e noted) symbol para m ete r v a lue unit s v cbo coll ector-bas e v o l t age 60 v v c e o coll ector-emitter v o l t age 40 v v e b o emitter-base v o l t a g e 6 v i c coll ector curr e n t -contin u o u s 0.2 a p c coll ector p o w e r dissip a t i on 0.625 w t j junctio n t e mperature 150 t s t g s t orage t e mpe rature -55-1 50 electrical chara cteristics (t a =25 unless ot he r w is e s peci e d) pa r a m e t e r sy m bol t est c ond i ti o n s m in t yp m ax u nit c o llecto r - b ase b r eakd o w n v o l t a g e v ( b r)cb o i c = 1 0 a, i e = 0 60 v c o llecto r -emitter b r e a k d o w n v o l t a g e v ( b r)ce o i c = 1 ma , i b = 0 40 v emitter-b a s e b r eakd o w n v o l t a g e v ( b r ) ebo i e = 1 0 a, i c = 0 6 v c o llecto r c u t-o c u rren t i c b o v c b = 60v , i e 0 = 0.1 a c o llecto r c u t-o c u rren t i c e x v c e = 3 0v , ,v be(o ) =3v 0 . 05 a emitter cut-o current i ebo v e b = 5 v , i c 0 = 0.1 a h fe1 v c e = 1 v , i c = 10ma 100 400 h fe2 v c e = 1 v , i c = 50ma 60 dc cu r r e n t g a i n h fe3 v c e = 1 v , i c = 100ma 30 c o llecto r -emitter satu r ation v o lt a g e v c e (sa t ) i c = 50ma, i b = 5 ma 0 .3 v bas e -emitte r satu r ation v o lt a g e v be( sat) i c = 50ma, i b = 5 ma 0 .9 5 v t r a n s ition fre que n c y f t v c e = 20v ,i c = 1 0 ma,f= 100mh z 300 mh z dela y t i m e t d 35 ns r i se t i m e t r v c c = 3 v , v b e = 0 . 5 v , i c = 10ma,i b 1 = 1 ma 35 ns s to rag e t i m e t s 200 ns fall t i me t f v c c = 3 v , i c = 10ma i b 1 = i b 2 = 1 ma 50 ns c l a ssif i c a t i on of h fe1 rank g y o ra n ge 0 0 4 - 0 0 3 0 0 3 - 0 0 2 0 0 2 - 0 0 1 t o-92 1. e m itter 2. bas e 3. col l ect or a,may,2011
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